BDV66-a-b-c 26/09/2012 comset semiconductors 1/4 p p n n p p s s i i l l i i c c o o n n d d a a r r l l i i n n g g t t o o n n s s p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r s s they are silicon epitaxial base transistors mounted in to-3pn. theyare designed for audio output stages and general amplifier and switching applications. complementary is bdv67-a-b-c compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage BDV66 -80 v BDV66a -100 BDV66b -120 BDV66c -140 v cbo collector-base voltage BDV66 -80 v BDV66a -100 BDV66b -120 BDV66c -140 v ebo emitter-base voltage BDV66 -5.0 v BDV66a BDV66b BDV66c i c collector current BDV66 -16 a BDV66a BDV66b BDV66c i cm collector peak current BDV66 -20 BDV66a BDV66b BDV66c i b base current BDV66 -0.5 a BDV66a BDV66b BDV66c www.datasheet.net/ datasheet pdf - http://www..co.kr/
BDV66-a-b-c 26/09/2012 comset semiconductors 2/4 absolute maximum ratings thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 0.625 c / w switching times symbol ratings test condition(s) value unit min typ max t on turn-on time i c = 10 a , v cc = 12 v i b1 = -i b2 = 40 ma - 1 - s t of f turn-off time - 3.5 - (*) pulse width 300 s, duty cycle 1.5 % symbol ratings value unit p t power dissipation t mb = 25 c BDV66 175 watts BDV66a BDV66b BDV66c t j junction temperature BDV66 150 c BDV66a BDV66b BDV66c t s storage temperature BDV66 -65 to +150 BDV66a BDV66b BDV66c www.datasheet.net/ datasheet pdf - http://www..co.kr/
BDV66-a-b-c 26/09/2012 comset semiconductors 3/4 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ceo collector cutoff current v ce = -40 v, i b = 0 BDV66 - - -1 ma v ce = -50 v, i b = 0 BDV66a v ce = -60 v, i b = 0 BDV66b v ce = -70 v, i b = 0 BDV66c i ebo emitter cutoff current v be = -5 v, i c = 0 BDV66 - - -5 ma BDV66a BDV66b BDV66c i cbo collector cutoff current i e = 0 t j =25c v cb = -80 v BDV66 - - -1 ma v cb = -100 v BDV66a v cb = -120 v BDV66b v cb = -140 v BDV66c i e = 0 t j =150c v cb = -40 v BDV66 - - -5 v cb = -50 v BDV66a v cb = -60 v BDV66b v cb = -70 v BDV66c v ceo collector-emitter breakdown voltage (*) i c = -100 ma, i b = 0 BDV66 -60 - - v BDV66a -80 - BDV66b -100 - - BDV66c -120 - - h fe dc current gain (*) v ce = -3 v, i c = -10 a BDV66 1000 - - - BDV66a BDV66b BDV66c v ce(sat) collector-emitter saturation voltage (*) i c = -10 a, i b = -40 ma BDV66 - - -2 v BDV66a BDV66b BDV66c v be base-emitter voltage(*) v ce = -3 v, i c = -10 a BDV66 - - -2,5 v BDV66a BDV66b BDV66c c ob output capacitance v cb = -10 v, i e = 0 f test = 1 mhz BDV66 - 300 - pf BDV66a BDV66b BDV66c www.datasheet.net/ datasheet pdf - http://www..co.kr/
BDV66-a-b-c 26/09/2012 comset semiconductors 4/4 mechanical data case to3pn n on isolated plastic package revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min. max. a 15.20 1600 b 1.90 2.10 c 4.60 5.00 d 3.10 3.30 e 9.60 f 2.00 g 0.35 0.55 h 1.40 j 5.35 5.55 k 20.00 l 19.60 20.20 m 0.95 1.25 n 2.00 o 3.00 p 4.00 r 4.00 s 1.80 t 4.80 5.20 pin 1 : base pin 2 : collector pin 3 : emitter package collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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